LSR – Bismuth telluride – Direct ZT measurement of the NIST Bi2Te3

Figure of Merit ZT/ Seebeck coefficient/ Electrical conductivity/ Thermal conductivity/ Thermoelectric properties

The figure of merit ZT is a crucial parameter describing the performance of thermoelectric materials. Typically, ZT is calculated from separate measurements of thermal and electric conductivity along with the Seebeck coefficient. Each of these measurements introduces a certain level of error.

The Harman method offers a distinct advantage by enabling the direct measurement of ZT in a single procedure. In this method, the voltage obtained by applying a current to a thermoelectric material comprises two components: the ohmic drop and the thermo-voltage. Dividing one by the other yields the ZT value.

App. Nr. 02-009-002 LSR – Bismuth telluride –Figure of Merit ZT Seebeck coefficient Electrical conductivity Thermal conductivity Thermoelectric properties

In Application Number 02-009-002 LSR, which focuses on Bismuth telluride, the figure of merit ZT, Seebeck coefficient, electrical conductivity, thermal conductivity, and other thermoelectric properties were analyzed. This study employed the Harman method in conjunction with the LINSEIS LSR platform.

Specifically, the NIST (SRM 3451)™ Bi2Te3 Bismuth telluride reference material was investigated, showcasing the distinctive voltage distribution at a single temperature measurement point. In this instance, the ZT figure of merit value at room temperature was easily calculated by comparing the ohmic voltage drop to the thermoelectric voltage drop. The determined ZT value for this material at room temperature was found to be 0.50.

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