TFA – thermoelectric thin film – thermoelectric properties – metals&alloys
Full ZT – Figure of Merit Characterization of a metallic thermoelectric thin film / Seebeck coefficient / electric conductivity / thermal conductivity
Thermoelectric materials play a crucial role in thermoelectric generators, where they convert temperature gradients into voltage. To evaluate the performance of these materials, the figure of merit (ZT) is a key parameter, which depends on thermal conductivity, electrical conductivity, and the Seebeck coefficient.
In the case of metallic thin layers, such as those utilized in integrated circuits within the industry, they exhibit lower thermal and electrical conductivities compared to their bulk counterparts. However, the Seebeck coefficient is less affected, leading to higher ZT values. This characteristic makes metallic thin films desirable for various applications.
In a recent study, a 100 nm thick gold (Au) nanofilm, prepared through DC magnetron sputtering, was investigated. The thermal conductivity, electrical conductivity, and Seebeck coefficient of the thin film were measured across a temperature range of 225 K to 375 K. Subsequently, the ZT value was calculated based on these parameters.
The results revealed that the measured thermal and electric conductivities of the thin film were approximately half of those observed in the bulk material. This discrepancy was found to be influenced by classical size effects, and the data aligned well with the Wiedemann-Franz law. This research highlights the intricate interplay of material properties in thin films and their potential for enhancing thermoelectric performance, particularly in applications such as integrated circuits.
Related instruments
TFA
Measurement technology for sample characterization of thin films (TFA) from 80 nanometers (nm) to 20 micrometers (µm). Integrated Hall constant (charge carrier concentration, hall mobility) and resistivity measurements.