TFA – thermoelectric thin film – thermoelectric properties – semiconductor Bi87Sb13

Full ZT – Figure of Merit Characterization of a thermoelectric thin film / Seebeck coefficient / electric conductivity / thermal conductivity

Thermoelectric materials play a crucial role in thermoelectric generators, where they convert a temperature gradient into voltage. The performance of a thermoelectric material is characterized using the figure of merit (ZT), which relies on knowledge of thermal conductivity, electric conductivity, and the Seebeck coefficient.

When compared to bulk materials of the same composition, thin layers exhibit lower thermal conductivities, while the electrical conductivity and Seebeck coefficient are less affected. Consequently, this results in higher ZT values. Bismuth-antimonides, with varying chemical compositions, are well-established as semi-conducting thermoelectric materials.

App. Nr. 02-013-001 TFA – thermoelectric thin film – thermoelectric properties – semiconductor – Bi87Sb13

In a recent study, electrical conductivity, thermal conductivity, and the Seebeck coefficient were measured across a temperature range of 120 K to 400 K on a nanofilm of Bi87Sb13, with a thickness of 142 nm, prepared through thermal evaporation. Using these parameters, the ZT was calculated, revealing a maximum value of 0.16 at room temperature (20°C).

App. Nr. 02-013-001 TFA – thermoelectric thin film – thermoelectric properties – semiconductor Bi87Sb13 nanofilm of 142 nm thickness

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