HCS 1/ 10/ 100 – Hall Effect Measurement System
Characterization of semiconductor devices
Description
On point
The HCS System is designed to facilitate the characterization of semiconductor devices, specifically in terms of their electrical transport properties, including Hall mobility, charge carrier concentration, resistivity, and Seebeck coefficient. The integrated desktop setups offer a range of products, from a basic manually operated Hall Characterization stage to an automated high-temperature stage, and even an innovative Halbach configuration for handling the characterization of the most challenging samples.
These systems can be equipped with various sample holders to accommodate different geometries and temperature requirements. You also have the option to attach a low-temperature (LN2) accessory or a high-temperature version that can reach up to 800°C, ensuring the coverage of a wide range of applications. Depending on the system configuration, you can choose between a permanent magnet, a water-cooled electromagnet, or a Halbach magnet to generate magnetic field strengths of up to 1 Tesla.
The comprehensive Windows-based software is user-friendly, providing a graphical user interface for controlling system parameters, defining measurement procedures and temperature profiles, and facilitating easy data evaluation, presentation, and storage.
Measurement features:
- Charge Carrier Concentration (Sheet [1/cm²]/Bulk [1/cm³])
- Hall-Constant [cm³/C]
- Hall-Mobility [cm²/Vs]
- Sheet resistance [Ω]
- Resistivity [Ωcm]
- Conductivity [S/cm]
- Alpha (horizontal/vertical ration of resistance)
- Megneto resistance
- Seebeck Coefficient [μV/K]
System features:
- Gas tight measurement chamber which allows measurements under defined atmospheres or vacuum conditions
- 120 mm diameter magnets for highest field homogeneity and maximum accuracy as well as biggest measurable sample sizes
- Modular and upgradeable system design
- High temperature version up to 600°C / 873 K
- Illumination option with LED Light source (multiple wavelength)
- Lock-in amplifier upgrade for lowest noise measurements
- Connector for use of external electronics
- Integrated software package for easy handling
- Seebeck Coefficient option to apply on board temperature gradients up to 20K
Measurement system
Permanent Magnet Option (HCS 1)
The HCS 1 stage is outfitted with two magnetic circuits composed of Neodymium magnets. These magnets are assembled on a movable sledge, which can be optionally automated for added convenience. The system also offers the flexibility to be equipped with both low-temperature and high-temperature extensions to meet various testing requirements.
Electromagnet Option (HCS 10)
In addition to the permanent magnet configuration, the HCS 10 system offers an optional electromagnet kit. This water-cooled electromagnet operates in conjunction with a programmable power supply and a current reversal switch. The power supply has the capability to apply currents of up to 75 A, resulting in a variable magnetic field strength that can reach up to +/-1 T. This electromagnet option provides enhanced flexibility for magnetic field manipulation in your experiments.
Halbach Option (HCS 100)
The HCS 100 employs a magnet in a Halbach configuration, which is essentially a permanent magnet arranged in a donut-like shape. This design allows for the application of both DC (direct current) and AC (alternating current) magnetic fields to the sample under investigation. When combined with AC current supplied by a Lock-in amplifier, this setup becomes a powerful tool for studying challenging samples. It is particularly effective in suppressing offset variations and noise, making it ideal for demanding experimental conditions.
Specifications
| Model | HCS 1 |
|---|---|
| Temperature range: | From LN2 up to 600°C in different versions -160°C (controlled cooling) -196°C (quench cooling) |
| Magnet: | two permanent magnets with +/- 0.7T** Pole diameter 120 mm for highest uniformity (+/- 1% over 50mm) |
| Input current: | DC 1nA up to 125mA (8 decades / Compliance +/- 12V) |
| Voltage measurement: | DC low noise / low drift 1μV up to 2500mV, 4 decades amplification, Digital resolution: 300pV |
| Sensors/ Sample geometry: | – from 5 x 5 mm to 12.5 x 12.5 mm, Maximum sample height 3 mm – from 17.5 x 17.5 mm up to 25 x25 mm, Maximum sample height 5 mm – from 42.5 x 42.5 mm up to 50 x 50 mm, Maximum sample height 5 mm – High Temperature board, 10x10mm, max. sample height 2mm |
| Resistivity Range: | 10-4 up to 107(Ωcm)* |
| Carrier concentration: | 107 up to 1021cm−3* |
| Mobility range: | 0.1 up to 107(cm2/Volt sec)* |
| Atmospheres: | Vaccum, inert, oxidizing, reducing |
| Temperature precision: | 0.05°C |
| Model | HCS 10 |
|---|---|
| Temperature range: | From LN2 up to 600°C in different versions -160°C (controlled cooling) -196°C (quench cooling) |
| Magnet: | Electromagnet up to +/-1 T variable DC field, Pole diameter 76 mm, Power supply 75A / 40V. Current reversal swith for bipolar measurement. Alternative AC-Option für ein magnetisches Wechselfeld mit ~1 T nutzbarem Feld, bei einer Frequenz bis zu 0.1 Hz. |
| Input current: | DC 1nA up to 125mA (8 decades / Compliance +/- 12V) AC 16 μA up to 20 mA and input impedance: >100 GigaOhm from 1 mHz to 100 kHz |
| Voltage measurement: | DC low noise / low drift 1μV up to 2500mV, 4 decades amplification, Digital resolution: 300pV AC 20 nV up to 1V, Variable integration times and amplfication |
| Sensors/ Sample geometry: | – from 5 x 5 mm to 12.5 x 12.5 mm, Maximum sample height 3 mm – from 17.5 x 17.5 mm up to 25 x25 mm, Maximum sample height 5 mm – from 42.5 x 42.5 mm up to 50 x 50 mm, Maximum sample height 5 mm – High Temperature board, 10x10mm, max. sample height 2mm |
| Resistivity Range: | 10-4 up to 107(Ωcm) |
| Carrier concentration: | 107 up to 1021cm−3 |
| Mobility range: | 10-2 up to 107(cm2/Volt sec) |
| Atmospheres: | Vaccum, inert, oxidizing, reducing |
| Temperature precision: | 0.05°C |
| Model | HCS 100 |
|---|---|
| Temperature range: | RT up to 500°C |
| Magnet: | Magnet up to 0.5 T (AC or DC field) Multisegment Halbach configuration, Inner diameter: 40mm, Height: 98mm |
| Current output: | DC 1nA up to 125mA (8 decades / Compliance +/- 12V) AC 16 μA up to 20 mA and output impedance: >100 GigaOhm from 1 mHz to 100 kHz |
| Voltage measurement: | DC low noise / low drift 1μV up to 2500mV, 4 decades amplification, Digital resolution: 300pV AC 20 nV up to 1V, Features: GΩ range input impedance, variable integration times and amplification |
| Sensors/ Sample geometry: | up to 10 x 10mm, Maximum sample height 2.5 mm |
| Resistivity Range: | 10-5 up to 107(Ωcm) |
| Carrier concentration: | 107 up to 1022cm−3 |
| Mobility range: | 1 ~ 107cm2V-1s-1 |
| Atmospheres: | Vaccum, inert, oxidizing, reducing |
| Temperature precision: | 0.05°C |
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Seebeck-Option
| Model | HCS 1 | HCS 10 |
|---|---|---|
| Sample Geometry: | length 6 mm to 15 mm, width 1 mm to 10 mm, height thin film to 2 mm |
length 6 mm to 15 mm, width 1 mm to 10 mm, height thin film to 2 mm |
| Seebeck Coefficient: | from 1 μV/K up to 2500 μV/K | from 1 μV/K up to 2500 μV/K |
| Measurement: | Slope technique with 10 Readings/Sec | Slope technique with 10 Readings/Sec |
| Gradient heater: | from 0.1 K up to 20 K | from 0.1 K up to 20 K |
| Thermocouples: | Type K | Type K |
Accessories
Extend your capabilities
- Various sample holders are at your disposal to conduct measurements spanning from LN2 (liquid nitrogen) temperatures up to 800°C.
- The sample holder handle securely seals the measurement chamber, maintaining a vacuum-tight environment.
- Furthermore, the measurement chamber is equipped with both gas inlet and outlet ports, enabling measurements to be performed under precisely controlled and adjustable atmospheric conditions.
Software
At LINSEIS, our commitment to precision begins with the seamless integration of our devices with PC control. All LINSEIS instruments are designed to be operated via Microsoft® Windows® operating systems, providing a user-friendly experience for temperature control, data acquisition, and data evaluation.
Key Features:
1. Optimum Measurement Settings: Utilize the NIST routine to identify the ideal measurement parameters, ensuring the highest level of accuracy in your results.
2. Enhanced Connection Testing: Our instruments offer an extended connection test for added reliability.
3. External Electronics Integration: Enjoy the flexibility of integrating external electronics as needed for your specific applications.
4. Optional Database Storage: Choose to store your data in a database for organized and accessible records.
5. Lock-In Amplifier Integration: Seamlessly integrate a lock-in amplifier to enhance your data acquisition capabilities.
6. Automatic Sensor Recognition: Our instruments automatically recognize connected sensors via EEPROM, simplifying setup.
7. Automatic Data Evaluation: Save time and streamline your workflow with fully automatic data evaluation.
8. Precise Cooling Regulation: Benefit from fully automatic cooling regulation to maintain optimal testing conditions.
9. HCS 10 Online Access: Access your data remotely with HCS 10, ensuring that your data is always at your fingertips.
LINSEIS Instruments empower you with the tools you need to achieve unparalleled precision and efficiency in your thermal analysis and measurement processes.
Applications
Antimony Thin Film (150 nm Sb)
Antimony (Sb) is a semimetal with diverse applications. It is commonly used in the field of thermoelectrics, often in the form of alloys like Bi1−xSbx. Additionally, antimony has found emerging applications in the field of microelectronics. However, the most significant use of metallic antimony is in the production of lead-antimony plates for lead–acid batteries.
The figure presented showcases a comprehensive characterization of a 150 nm thick antimony thin film on a SiO2/Si substrate. This film was prepared using sputter deposition and analyzed using the Linseis HCS 1 system with the room temperature to 200°C option. This characterization likely provides valuable insights into the properties and behavior of antimony in this specific application.
Bismuth-Antimony Thin Film (150 nm Bi87Sb13)
Bismuth-antimony alloys, such as (Bi1−xSbx), represent binary mixtures of bismuth and antimony in different ratios. Some of these alloys, especially Bi0.9Sb0.1, were among the first experimentally observed three-dimensional topological insulators. These materials exhibit conducting surface states while maintaining an insulating interior. Various BiSb alloy compositions are also employed in the construction of low-temperature thermoelectric devices.
The presented measurement involves a thermally evaporated thin film of Bi87Sb13. This analysis likely provides valuable insights into the properties and behavior of this specific bismuth-antimony alloy in the context of its potential applications, such as in topological insulators and thermoelectric devices designed to operate at low temperatures.
ITO (Indium tin oxide) up to 600°C using HCS 10
Indium tin oxide (ITO) is a ternary compound comprising indium, tin, and oxygen in varying proportions. Depending on the oxygen content, it can be classified as either a ceramic or an alloy. ITO is known for its transparent and colorless properties in thin layers and is one of the most widely utilized transparent conducting oxides. Its popularity is mainly due to two key attributes: its electrical conductivity and optical transparency.
However, like all transparent conducting films, there’s a trade-off between conductivity and transparency. Increasing film thickness and charge carrier concentration enhances the material’s conductivity but reduces its transparency. To understand how ITO behaves under varying conditions, including at elevated temperatures up to 600°C, the HCS 10 system has been employed to characterize this material. This research provides valuable insights into the performance and stability of ITO in demanding applications, where both electrical conductivity and optical transparency are crucial factors.
ITO (Indium tin oxide) up to 200°C using HCS 1
The two diagrams illustrate a comprehensive characterization of two distinct ITO thin films, each with a thickness of 185 nm. These thin films were created through sputter deposition, and the analysis was conducted using the Linseis HCS 1 system with the room temperature to 200°C option. This research provides insights into the properties and behavior of ITO at temperatures up to 200°C, which is valuable for applications requiring knowledge of how this material performs under varying thermal conditions.
Measurement of the Constantan reference sample
Measure the Seebeck Coefficient on a Constantan reference sample across a temperature range of -140°C to +180°C. We employ the slope technique (as shown in the inset) to determine the Seebeck Coefficient at each temperature data point. The outcomes can be visualized either as the Relative Seebeck Coefficient against Pt or as the Absolute Seebeck Coefficient.
External applications
Investigating the Influence of Alkaline Earth Dopants on the Density, Mechanical Strength, and Electrical Characteristics of Cu0.97AE0.03CrO2 Delafossite Oxides (AE = Magnesium, Calcium, Strontium, and Barium) – A Study Published in the 2018 Journal of the Australian Ceramic Society.
Downloads
Hall Effect Product Brochure (PDF)
